PART |
Description |
Maker |
K4H1G0838M-TC_LB3 K4H1G0438M K4H1G0438M-TC_LA2 K4H |
1Gb M-die DDR SDRAM Specification
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
K4H510738E-TC_LB0 K4H510638E-TC_LA2 K4H510638E-TC_ |
Stacked 512Mb E-die DDR SDRAM Specification (x4/x8)
|
SAMSUNG[Samsung semiconductor]
|
HY5PS1G831CFP-Y5 HY5PS1G831CLFP-Y5 HY5PS1G1631CFP- |
1Gb DDR2 SDRAM 1G DDR2内存 1Gb DDR2 SDRAM 64M X 16 DDR DRAM, 0.5 ns, PBGA84
|
Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
|
EBD11ED8ADFB-7B EBD11ED8ADFB EBD11ED8ADFB-6B EBD11 |
1GB Unbuffered DDR SDRAM DIMM (128M words x72 bits, 2 Ranks) 1GB的无缓冲DDR SDRAM的内存(128M的话x72位,2个等级) 1GB Unbuffered DDR SDRAM DIMM (128M words x72 bits, 2 Ranks) 128M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
|
Elpida Memory, Inc. ELPIDA[Elpida Memory]
|
HYMD212G726ALS4-H HYMD212G726ALS4-K HYMD212G726ALS |
128Mx72|2.5V|M/K/H/L|x36|DDR SDRAM - Registered DIMM 1GB 128Mx72 | 2.5V的| /升| x36 | DDR SDRAM内存-内存1GB的注 Registered DDR SDRAM DIMM 128M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
|
Hynix Semiconductor HYNIX SEMICONDUCTOR INC
|
EM6A9320 EM6A9320BI-28 EM6A9320BI-30 EM6A9320BI-33 |
285MHz 2.8V 4M x 32 DDR SDRAM 300MHz 2.8V 4M x 32 DDR SDRAM 333MHz 2.8V 4M x 32 DDR SDRAM 350MHz 2.8V 4M x 32 DDR SDRAM 4M x 32 DDR SDRAM 4米32 DDR SDRAM内存
|
ETRON[Etron Technology, Inc.] Etron Technology Inc. ETRON[Etron Technology Inc.]
|
K4T1G044QE-HCLE6 K4T1G044QE-HCLE7 K4T1G044QE-HCLF7 |
1Gb E-die DDR2 SDRAM
|
Samsung semiconductor
|
K4T1G044QE |
1Gb E-die DDR2 SDRAM
|
Samsung semiconductor
|
K4T1G084QC K4T1G044QC |
1Gb C-die DDR2 SDRAM Specification
|
Samsung semiconductor
|
K4T1G164QQ K4T1G164QQ-HCLE6 K4T1G164QQ-HCLE7 K4T1G |
1Gb Q-die DDR2 SDRAM Specification
|
Samsung semiconductor
|
K4B1G0446D |
1Gb D-die DDR3 SDRAM Specification
|
Samsung semiconductor
|